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conferenceseries
.com
Volume 5, Issue 6 (Suppl)
J Mat. Sci.
ISSN: 2321-6212
Advanced Materials 2017
October 26-28, 2017
OCTOBER 26-28, 2017 OSAKA, JAPAN
13
TH
INTERNATIONAL CONFERENCE ON
Advanced Materials and Nanotechnology
High performance complex oxide hetero-structures for nanoelectronic devices
Sean Li
University of New South Wales, Australia
T
he demand for higher performance and lower power consumption in electronic systems is the main driving force for the
creation of new materials for devices in nanometer scale. The success of these new materials is dependent on significant
enhancement in carrier mobility and conductivity. In this work, we spatially separate the electron generation layer from the
conduction layer by engineering the atomically sharp complex oxide hetero-interfaces to enhance the electron mobility and
density individually. It aims to develop a novel material with ultrahigh electron mobility and conductivity that are orders of
magnitude above today’s state- of-the-art materials at room temperature to enable next generation nanoelectronics.
Biography
Sean Li is presently associated with School of Materials Science and Engineering the University of New South Wales, Sydney. He has published numerous
research papers and articles in reputed journals and has various other achievements in the related studies He has extended his valuable service towards the
scientific community with hisextensive research work.
sean.li@unsw.edu.auSean Li, J Mat. Sci. 2017, 5:6
DOI: 10.4172/2321-6212-C1-008