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Volume 6

Research & Reviews: Journal of Material Sciences

ISSN: 2321-6212

Materials Physics 2018

August 16-17, 2018

August 16-17, 2018 | London, UK

4

th

International Conference on

Condensed Matter and Materials Physics

Diamond growth in air at room temperature in СVD-grown pseudo-graphite films

I M Shmytko, O V Misochko

and

S K Brantov

Institute of Solid State Physics - RAS, Russia

A

ttempts have been made to develop a simple and fast technique of producing diamond-like films by chemical vapor

deposition (СVD) via methane pyrolysis at ~1270-1420 K using a simple reaction cell in the form of a capacitor. Under the

impact of electric field ~ 10

-2

V/µm the сarbon condensed onto single crystal silicon substrates placed between the capacitor

graphite plates. However, applying this technique we obtained instead of diamond-like films, pseudo-graphite films with

graphitization index of ≈0.44. The films were extremely brittle, easily ground in an agate mortar into nanopowder with grain

sizes of several tens of nanometers and demonstrated micro hardness comparable to that of diamond (~70-90 GPа). They

also exhibited a pronounced texture in the direction of the film normal coinciding with the graphite c-axis and consisted of

nanocrystallites with average size <D>≈7 nm. Moreover, the films turned out to be highly inhomogeneous with local lattice

parameter variations Δc≈0.22 Ǻ (Δc/c≈ε=3.15%). After ~ 2 years this film aged in a normal atmosphere at room temperature

have undergone considerable and, in our opinion, unique variations. Researches on the film by XRD, Raman spectroscopy and

SEM methods showed that for the aging their structure has changed. The main products of the interaction of the films with

the atmosphere turned out to be carbide of silicon and carbon in the form of micro crystalline diamond of high perfection, see

fig.1-b. The mechanism reconstruction of pseudo-graphite film into the silicon carbide and diamond is discussed.

shim@issp.ac.ru

Res. Rev. J Mat. Sci. 2018, Volume 6

DOI: 10.4172/2321-6212-C2-018