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.com
Volume 6
Research & Reviews: Journal of Material Sciences
ISSN: 2321-6212
Ceramics 2018
May 14-15, 2018
May 14-15, 2018 | Rome, Italy
4
th
International Conference and Expo on
Ceramics and Composite Materials
First principles study electronic properties of (110) surface GaAs/GaN nanowires
Y. Chaib
1
, S. Benmokhtar
1
, M. Moutaabbid
1
, P.E. Hoggan
2
and
C. Robert-Goumet
2
1
University of Casablanca, Morocco
2
University Blaise Pascal, France
G
aAs one of III-V compound semiconductor nanowires that exhibit direct band gap has attracted much attention of
researchers due its potential application in the field of optoelectronic and microelectronic devices like photovoltaic cells,
photo detectors, modulators, filters, integrated circuits and light emitting diodes, it has been widely studied both experimentally
and theoretically, a fundamental understanding of its physical properties is still in demand of this novel material. During
the manufacture of its nanowires, their surfaces present anomalies which bound to Ga-free broken bonds which are easily
interacted with the environment and they oxidize for remedy this problem. We passivated these surfaces by the nitrogen for
saturating their surfaces. Motivated by the available literature on GaAs according to the crystalline plane (110), we carried
out calculations for structural and electronic properties of GaAs in its stable zinc-blende phase using full potential linearized
augmented plane wave method (FP-LPAW) designed within DFT. After that, we will passivate these nanowires by the nitrogen;
we study the nutrient effect on their physical properties (GaAs / GaN) by keeping the same theoretical model used previously
from a similar study that has been carried out on plane surfaces of GaAs showed that nitridation phenomena leads to the
deposition of a thin layer of GaN and confers passivated to the solid.
younesschaib@gmail.comRes. Rev. J Mat. Sci. 2018, Volume 6
DOI: 10.4172/2321-6212-C1-015