Research Article Open Access

Effect of Annealing Temperatures on Zinc Thioindate Thin Films

Abstract

Ternary ZnIn2S4 (ZIS) films were deposited on a glass substrate using Spray pyrolysis method. The properties of as-deposited ZnIn2S4 film and annealed films were characterized using the XRD, UV-Vis-NIR spectroscopy and Raman spectrum, FESEM, EDAX and Photoluminance. The XRD result shows the hexagonal structure. Optical study shows the maximum transparency of nearly 88% for 550°C annealed film (ZIS-T5).Absorption edge for as-deposited (ZIS) , annealed films (ZIS-T1 -350°C, ZIS-T2 - 450°C and ZIS-T3 - 550°C) values found to be 536 nm and 525 nm, 498nm and 441nm.Band gap(Eg) values of the as-deposited, annealed film (350°C, 450°C, 550°C) values were estimated at 2.79 eV,2.89 eV, 2.94 eV and 3.3eV respectively. Morphology of as-deposited ZnIn2S4 film shows the rulles dollops rather than a microsphere, EDAX spectrum showed the Composition of the film closed to the stoichiometric compound. From the Pl spectrum strong emission band at ∼470 nm was observed for as-deposited (ZIS) and annealed films (ZIS-T1, ZIS-T2).

S Hemalatha , J Tamil Illakkiya , Rachel Oommen

To read the full article Download Full Article | Visit Full Article