A Physics Based Nonlinear 2d-Thermal Modelling Of High Power Thz Transit Time Device | Abstract

ISSN ONLINE(2278-8875) PRINT (2320-3765)

Research Article Open Access

A Physics Based Nonlinear 2d-Thermal Modelling Of High Power Thz Transit Time Device

Abstract

In this paper for the first time the author has studied the high frequency, high temperature application possibility of SiC group material based transit time devices. Here SiC of cubic type is studied. The author has designed a 220GHz transit time device based on 3C-SiC. It is depicted that as far as high frequency performance power output and efficiencies are concerned SiC devices are far better, compared to its conventional Si and GaAs counterpart. Also owing to its high thermal conductivity SiC device is capable of handling high temperature to obtain high power at Millimeter wave frequency without facing thermal runaway problem.

Puja De, Moumita Mukherjee

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