PROPERTIES AND ELECTRICAL STUDYOF IN2S3/SNO2/GLASS SUBSTRATES | Abstract

ISSN ONLINE(2278-8875) PRINT (2320-3765)

Research Article Open Access

PROPERTIES AND ELECTRICAL STUDYOF IN2S3/SNO2/GLASS SUBSTRATES

Abstract

In2S3 films have been deposited on SnO2 pyrex substrates by vacuum thermal evaporation technique. The bilayers are intended for photovoltaic applications. Different characterization methods have been employed: optical properties of the films were investigated from transmittance measurements, structural properties by XRD, and surface morphology by SEM microscopy analysis. X-ray diffraction shows crystallized films corresponding to In2S3 phase. According to SEM image, the film is very compact and homogeneus microstructure. Electrical measurements by Hall effect shows that resistivity is about 0.910-3Ω.cm, tIn2S3 films have been deposited on SnO2 pyrex substrates by vacuum thermal evaporation technique. The bilayers are intended for photovoltaic applications. Different characterization methods have been employed: optical properties of the films were investigated from transmittance measurements, structural properties by XRD, and surface morphology by SEM microscopy analysis. X-ray diffraction shows crystallized films corresponding to In2S3 phase. According to SEM image, the film is very compact and homogeneus microstructure. Electrical measurements by Hall effect shows that resistivity is about 0.910-3Ω.cm, the mobility is 49.3cm2/Vsand the concentration of carriers is 1.41019cm-3. The determination of the carrier type by the hot point and hall effect gives the same result. The layer has a rather low resistance of 60 Ω. The conductance and capacitancecharacterization at ambient temperature in dark and under illumination were also investigated and gives interest physical properties for photovoltaic applications.he mobility is 49.3cm2/Vsand the concentration of carriers is 1.41019cm-3. The determination of the carrier type by the hot point and hall effect gives the same result. The layer has a rather low resistance of 60 Ω. The conductance and capacitancecharacterization at ambient temperature in dark and under illumination were also investigated and gives interest physical properties for photovoltaic applications.

A. Timoumi

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