Scaling Theory for Conical Surrounding-Gate MOSFET | Abstract

ISSN ONLINE(2278-8875) PRINT (2320-3765)

Research Article Open Access

Scaling Theory for Conical Surrounding-Gate MOSFET

Abstract

In this paper, we present scaling theory for conical Surrounding-Gate MOSFET which was derived from the cylindrical form of Poisson's equation assuming parabolic potential profile in the radial direction. For performance estimation, device simulation is done and the data were compared with some existing model of cylindrical as well as Double Gate MOSFET. Subthreshold swing and DIBL effects were simulated for this developed model and was compared with cylindrical and DG structure and found that conical structure gives better immunity to the short channel effect.

Durlav Sonowal, Santanu Sarma, Riku Chutia

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