Characterization of Mo-AlNxOy Thin Films Deposited by RF Magnetron Sputtering
Thin films of Mo-AlNxOy were grown on glass and silicon substrates by RF-reactive magnetron sputtering. The substrate deposition temperature was varied with the purpose of evaluating the composition variation, crystal structure, reflectance, absorptance and band gap of the films. The results showed that the most amorphous films presented the highest absorptance. The absorptance increase and the band gap reduction are due to the crystallinity and the molybdenum insertion. This change occurred due to the different behavior of band gap amorphous materials, the electron acceptors/donors increase and plasmon effect caused by molybdenum insertion.
Thyago Santos Braga, Marcos Massi, Argemiro Soares Silva Sobrinho, Fabio Dondeo Origo, Choyu Otani