Special Issue Article Open Access

Gate Capacitance Extraction Two Dimensional T- Shaped Junction less Transistor Using Sentaurus TCAD

Abstract

The junctionless transistor is one of the device structures which found tremendous potential in terms of reduction of short channel effects, scaling factors, capacitance & fabrication. In this paper we observed an improved gate capacitance (Cgg) in depletion and inversion regions of a T-shape double gate junctionless transistor with comparison to the single gate junctionless transistor for oxide thickness (tox), different doping concentration (ND) and Gate lengths (Lg).

B Prashanth Kumar, G.Amarnath, G S Rao, Wasim Arif, and Srimanta Baishya

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