Research Article Open Access

Effects of gate insulator thickness and diameter over on/off current ratio in ballistic CNTFETs

Abstract

This paper deals with the changes of the gate insulator thickness and diameter of the nano tube on the carbon nano tube field effect transistor (CNTFET). With a large CNT diameter and thinner gate oxide enhanced onstate current can be profound. On the other hand, the off-state current improves in CNTFETs with thinner gate oxide. Also the simulation results show that the variance of insulator thickness on the threshold voltage, has no effect on the off-state current. In this way an optimum values of gate insulator thickness and diameter of the nano tube are identified to offer highest on/off current ratio of the device.

Safayat-Al Imam

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