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Digital etching of III-V semiconductors in aqueous solutions

10th International Conference on Emerging Materials and Nanotechnology

July 27-29, 2017 Vancouver, Canada

Jan J Dubowski

University de Sherbrooke, Canada

Keynote: Res. Rev. J Mat. Sci

DOI: 10.4172/2321-6212-C1-001


Etching of semiconducting materials at rates approaching atomic level resolution is of high interest to the advancement of technologies addressing fabrication of low-dimensional devices, tunability of their optoelectronic properties and precise control of device surface structure. The so- called digital etching that takes advantage of a self-limiting reaction has the potential to address some of these challenges. However, conventional applications of this approach proposed almost 30 years ago, require specialized and expensive equipment, which contributed to a relatively slow progress in penetration of digital etching to micro/nanofabrication processing schemes. We have observed that for photoluminescence (PL) emitting materials with negligible dark corrosion, it is possible to carry out PL-monitored photo-corrosion in cycles analogous to those employed in digital etching. The advantage of this approach is that photo-corrosion of materials, such as GaAs/AlGaAs hetero-structures, could be carried in a water environment. This digital photo-corrosion (DIP) process could be carried out in cycles, each approaching sub-monolayer precision. I will discuss fundamentals of DIP and mechanisms responsible for achieving highresolution etch rates of semiconducting materials. For instance, we have demonstrated a successful dissolution of a 1-nm thick layer of GaAs embedded between Al0.35Ga0.65As barriers in a 28% NH4OHH2O, and we claimed that under optimized conditions a further enhanced resolution is feasible. The nm-scale depth resolution achieved with DIP and low-cost of the instrumentation required by this process is of a potential interest to specialized diagnostics, structural analysis of multilayer nanostructures and, e.g., revealing in-situ selected interfaces required for the fabrication of advanced nano-architectures. We have explored the sensitivity of DIP to perturbations induced by electrically charged molecules, such as bacteria, immobilized on semiconductor surfaces. Here, I will highlight our recent studies on detection of Escherichia coli and Legionella pneumophila bacteria immobilized on antibody functionalized GaAs/AlGaAs biochips. I will also discuss the application of this approach for studying antibiotic reactions of bacteria growing on biofunctionalized surfaces of GaAs/AlGaAs biochips.


Jan J Dubowski received his PhD degree in Semiconductor Physics from the Wroclaw University of Technology, Poland. He is a Canada Research Chair and a full Professor at the Department of Electrical and Computer Engineering of the University de Sherbrooke, Canada. He is a Fellow of SPIE- The International Society for Optics and Photonics (citation: “For innovative methods of investigation of laser- matter interaction”). He has published over 200 research papers, reviews, book chapters and conference proceedings. He is an Associate Editor of the Journal of Laser Micro/Nanoengineering, Biosensors and Light: Science & Applications. helps to translate Spanish to English and English to Spanish for free. kullanarak 100'den fazla dil ciftinde hemen ceviriler yapabilirsiniz.ingilizce turkce ceviri helps to translate English to Spanish to English for free. ingilizce turkce ceviri, turkce ingilizce ceviri, ingilizce turkce cumle ceviri, ingililizceyi turkceye ceviri ve turkceyi ingilizceye ceviri gibi tum dillerde dogru ceviri hizmetleri sunuyor. kullanarak 100'den fazla dil ciftinde hemen ceviriler yapabilirsiniz.ingilizce turkce ceviri