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Effect of in addition on structural, optical, electrical and photoconductivity of iso-coordinated InxSb20-xAg10Se70 (0≤x≤20) chalcogenide films


10th International Conference on Emerging Materials and Nanotechnology

July 27-29, 2017 Vancouver, Canada

Rita Sharma, Shaveta Sharma, Praveen Kumar, R Thangaraj and M Mian

Guru Nanak Dev University, India
DAV University, India

Posters & Accepted Abstracts: Res. Rev. J Mat. Sci

DOI: 10.4172/2321-6212-C1-003

Abstract

Many physical properties the chalcogenide systems strongly depends upon the composition and type of impurity added. In this work, structural and optical properties of thermally evaporated InxSb20-xAg10Se70 (0≤x≤20) chalcogenide films were studied. Bulk polycrystalline granules were used for the deposition of thin films. XRD studies reveal the amorphous character of the as-prepared films. FESEM images reveal a change in irregular trend in the morphological structures with composition. The EDS spectra show the composition of the as-prepared films is in stoichiometric with the bulk samples. Raman Spectroscopy shows the occurrence of Sb-Se and Sb-Sb bond vibrations for AgSbSe2 structural units and In-Se bond vibrations in AgInSe2 structural units. The optical transmittance and reflectance measurements were used to calculate the absorption coefficient and the indirect optical band gap is found to increases with indium content. The change in film morphology and change in the concentration of molecular units have been used to discuss optical properties with the increase in indium content. The electrical properties, by measurements of DC conductivity, intensity dependence of photoconductivity and IV characteristics, have been studied to give up the valuable information about the transport mechanism of the charge carriers and the type of charge carriers in InxSb20-xAg10Se70 (0≤x≤20) thin films.

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