Parametric Study for α-CsPbI<sub>2</sub>Br Film Growth by Mist Chemical Vapor Deposition

Jeha Kim

ISSN: 2320-2459

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Research Article Open Access

Parametric Study for α-CsPbI₂Br Film Growth by Mist Chemical Vapor Deposition

Abstract

Using an atmospheric mist Chemical Vapor Deposition (CVD), we fabricated successfully CsPbI₂Br films under various growth conditions: CsPbI₂Br precursor of 0.4 molar concentration, carrier and dilution N₂ flow rates of 200 and 1500 cc/min, substrate temperature of 68°C, and growth time of 35 min.

Jeha Kim*

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